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1/13 june 2005 stp40n20 stb40n20 - STW40N20 n-channel 200v - 0.038 ? - 40a to-220/to-247/d 2 pak low gate charge stripfet? mosfet table 1: general features typical r ds (on) = 0.038 ? gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility excellent figure of merit (r ds *q g ) 100% avalanche tested description this mosfet series realized with stmicroelec- tronics unique stripfet process has specifically been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high-efficiency isolated dc-dc converters. applications high current, high speed switching ups table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stp40n20 STW40N20 stb40n20 200 v 200 v 200 v < 0.045 ? < 0.045 ? < 0.045 ? 40 a 40 a 40 a 160 w 160 w 160 w 1 2 3 1 2 3 1 3 to-220 to-247 d 2 pak sales type marking package packaging stp40n20 p40n20 to-220 tube STW40N20 w40n20 to-247 tube stb40n20 b40n20 d 2 pak tape & reel rev. 3
stb40n20 - stp40n20 - STW40N20 2/13 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 40a, di/dt 200 a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dgr drain-gate voltage (r gs = 20 k ? )200v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 40 a i d drain current (continuous) at t c = 100c 25 a i dm ( ) drain current (pulsed) 160 a p tot total dissipation at t c = 25c 160 w derating factor 1.28 w/c dv/dt (1) peak diode recovery voltage slope 12 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c to-220/ to-247 rthj-case thermal resistance junction-case max 0.78 c/w rthj-amb thermal resistance junction-ambient max 62.5 50 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 40 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 230 mj
3/13 stb40n20 - stp40n20 - STW40N20 electrical characteristics (t case =25c unless otherwise specified) table 6: on/off table 7: dynamic table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10v, i d = 20 a 0.038 0.045 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d =20 a 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 2500 510 78 pf pf pf t d(on) t r t d(off) t r turn-on delay time rise time turn-off delay time fall time v dd = 100 v, i d = 20 a, r g = 4.7 ? v gs = 10 v (resistive load see, figure 17) 20 44 74 22 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160v, i d = 40 a, v gs = 10v 75 13.2 35.5 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 40 160 a a v sd (1) forward on voltage i sd = 20 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100a/s v dd = 100v, t j = 25c (see test circuit, figure 18) 192 922 9.6 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100a/s v dd = 100v, t j = 150c (see test circuit, figure 18) 242 1440 11. 9 ns nc a
stb40n20 - stp40n20 - STW40N20 4/13 figure 3: safe operating area for to-220/ d 2 pak figure 4: safe operating area for to-247 figure 5: output characteristics figure 6: thermal impedance for to-220/ d 2 pak figure 7: thermal impedance for to-247 figure 8: transfer characteristics
5/13 stb40n20 - stp40n20 - STW40N20 figure 9: transconductance figure 10: gate charge vs gate-source voltage figure 11: normalized gate threshold voltage vs temperature figure 12: static drain-source on resistance figure 13: capacitance variations figure 14: normalized on resistance vs tem- perature
stb40n20 - stp40n20 - STW40N20 6/13 figure 15: source-drain forward characteris- tics
7/13 stb40n20 - stp40n20 - STW40N20 figure 16: unclamped inductive load test cir- cuit figure 17: switching times test circuit for resistive load figure 18: test circuit for inductive load switching and diode recovery times figure 19: unclamped inductive wafeform figure 20: gate charge test circuit
stb40n20 - stp40n20 - STW40N20 8/13 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/13 stb40n20 - stp40n20 - STW40N20 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
stb40n20 - stp40n20 - STW40N20 10/13 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
11/13 stb40n20 - stp40n20 - STW40N20 tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stb40n20 - stp40n20 - STW40N20 12/13 table 9: revision history date revision description of changes 27-sep-2004 1 first release. 03-feb-2005 2 complete version 03-jun-2005 3 update with d 2 pak
13/13 stb40n20 - stp40n20 - STW40N20 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subjec t t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are no t a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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